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參數資料
| 型號： | 934056821315 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, 2 PIN |
| 文件頁數： | 3/7頁 |
| 文件大小： | 72K |
| 代理商： | 934056821315 |
2001 Nov 01
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP1321-01
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF =50 mA
0.95
1.1
V
IR
reverse leakage current
VR =60V
0.1
A
VR =20V
tbd
A
Cd
diode capacitance
VR = 0; f = 1 MHz
0.32
pF
VR = 1 V; f = 1 MHz
0.28
pF
VR = 20 V; f = 1 MHz
0.22
0.32
pF
rD
diode forward resistance
f = 100 MHz; note 1
IF = 0.5 mA
3.2
5.0
IF =1mA
2.3
3.6
IF =10mA
1.1
1.8
IF = 100 mA
0.8
1.3
|s
21|
2
isolation
VR = 0; f = 900 MHz
15.7
dB
VR = 0; f = 1800 MHz
10.8
dB
VR = 0; f = 2450 MHz
8.7
dB
|s
21|
2
insertion loss
IF = 0.5 mA; f = 900 MHz
0.26
dB
IF = 0.5 mA; f = 1800 MHz
0.28
dB
IF = 0.5 mA; f = 2450 MHz
0.31
dB
|s
21|
2
insertion loss
IF = 1 mA; f = 900 MHz
0.20
dB
IF = 1 mA; f = 1800 MHz
0.23
dB
IF = 1 mA; f = 2450 MHz
0.25
dB
|s
21|
2
insertion loss
IF = 10 mA; f = 900 MHz
0.15
dB
IF = 10 mA; f = 1800 MHz
0.18
dB
IF = 10 mA; f = 2450 MHz
0.21
dB
|s
21|
2
insertion loss
IF = 100 mA; f = 900 MHz
0.10
dB
IF = 100 mA; f = 1800 MHz
0.13
dB
IF = 100 mA; f = 2450 MHz
0.16
dB
τ
L
charge carrier life time
when switched from IF =10mA to
IR =6mA; RL = 100 ;
measured at IR =3 mA
0.5
s
LS
series inductance
IF = 100 mA; f = 100 MHz
0.6
nH
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
190
K/W
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