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參數資料
| 型號： | 934056928115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 934056928115 |
2002 Apr 08
2
Philips Semiconductors
Product specication
Schottky barrier diode
1PS79SB63
FEATURES
Very low capacitance
Low forward voltage
Ultra small plastic SMD package.
APPLICATIONS
High frequency detection
Ultra high-speed switching
Zero bias detection.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a
SOD523 (SC-79) ultra small plastic SMD package.
ESD sensitive device, observe handling precautions.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
12
Top view
MGU325
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
Marking code: T1.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
5V
IF
continuous forward current
20
mA
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ = 0.25
400
mA
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
JEDEC method
550
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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