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參數資料
型號: 935040890118
廠商: NXP SEMICONDUCTORS
元件分類: 接收器
英文描述: FM, AUDIO SINGLE CHIP RECEIVER, PDSO20
封裝: 4.40 MM, PLASTIC, SOT-266-1, SSOP-20
文件頁數: 9/14頁
文件大小: 130K
代理商: 935040890118
Philips Semiconductors
Product specification
SA615
High performance low power mixer FM IF system
1997 Nov 07
4
AC ELECTRICAL CHARACTERISTICS
TA = 25°C; VCC = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step–up; IF frequency = 455kHz; R17 = 5.1k; RF
level = –45dBm; FM modulation = 1kHz with +8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.
Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics.
The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed
parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA615
UNITS
MIN
TYP
MAX
Mixer/Osc section (ext LO = 300mV)
fIN
Input signal frequency
500
MHz
fOSC
Crystal oscillator frequency
150
MHz
Noise figure at 45MHz
5.0
dB
Third-order input intercept point
f1 = 45.00; f2 = 45.06MHz
-12
dBm
Conversion power gain
Matched 14.5dBV step-up
8.0
13
dB
50
source
-1.7
dB
RF input resistance
Single-ended input
3.0
4.7
k
RF input capacitance
3.5
4.0
pF
Mixer output resistance
(Pin 20)
1.25
1.50
k
IF section
IF amp gain
50
source
39.7
dB
Limiter gain
50
source
62.5
dB
Input limiting -3dB, R17 = 5.1k
Test at Pin 18
-109
dBm
AM rejection
80% AM 1kHz
25
33
43
dB
Audio level, R10 = 100k
15nF de-emphasis
60
150
260
mVRM
S
Unmuted audio level, R11 = 100k
150pF de-emphasis
530
mV
SINAD sensitivity
RF level -118dB
12
dB
THD
Total harmonic distortion
-30
-42
dB
S/N
Signal-to-noise ratio
No modulation for noise
68
dB
IF RSSI output, R9 = 100k1
IF level = -118dBm
0
160
800
mV
IF level = -68dBm
1.7
2.5
3.3
V
IF level = -18dBm
3.6
4.8
5.8
V
RSSI range
R9 = 100k Pin 16
80
dB
RSSI accuracy
R9 = 100k Pin 16
+2
dB
IF input impedance
1.40
1.6
k
IF output impedance
0.85
1.0
k
Limiter intput impedance
1.40
1.6
k
Unmuted audio output resistance
58
k
Muted audio output resistance
58
k
RF/IF section (int LO)
Unmuted audio level
4.5V = VCC, RF level = -27dBm
450
mVRM
S
System RSSI output
4.5V = VCC, RF level = -27dBm
4.3
V
NOTE:
1. The generator source impedance is 50
, but the SA615 input impedance at Pin 18 is 1500. As a result, IF level refers to the actual signal
that enters the SA615 input (Pin 8) which is about 21dB less than the ”available power” at the generator.
相關PDF資料
PDF描述
934011650127 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC
934011660127 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
934011690127 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
934041010118 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
934011670127 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
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