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參數(shù)資料
| 型號(hào)： | A1361LKTTN-T |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 4.65-4.80V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封裝： | LEAD FREE, PLASTIC, SIP-4 |
| 文件頁(yè)數(shù)： | 9/25頁(yè) |
| 文件大小： | 615K |
| 代理商： | A1361LKTTN-T |
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A1360, A1361,
and A1362
(Decimal Equivalent)
Code 5
Bit Field Selection
Address Code Format
Code in Binary
Fuse Blowing
Target Bits
Fuse Blowing
Address Code Format
(Binary)
1 0 1
Bit 2
Bit 0
Code 4
Code 1
(Decimal Equivalents)
Figure 3. Example of code 5 broken into its binary components,
equaling code 4 and code 1.
Note: After blowing, the programming is not reversible, even
after cycling the supply power. Although a register bit field fuse
cannot be reset after it is blown, additional bits within the same
register can be blown at any time until the device is locked. For
example, if bit 1 (binary 10) has been blown, it is still possible to
blow bit 0. The end result would be binary 11 (decimal code 3).
Locking the Device
After the desired code for each parameter is programmed, the
device can be locked to prevent further programming of any
parameters. See the Lock Mode section for lock pulse sequence.
Additional Guidelines
The additional guidelines in this section should be followed to
ensure the proper behavior of these devices:
A 0.1 μF blowing capacitor, CBLOW, must be mounted between
the VOUT pin and the GND pin during programming, to ensure
enough current is available to blow fuses.
The CBLOW blowing capacitor must be replaced in the final
application with a suitable CL. (The maximum load capacitance
is 10 nF for proper operation.) The power supply used for
programming must be capable of delivering at least 26 V and
300 mA. Be careful to observe the tLOW delay time before
powering down the device after blowing each bit.
The following programming order is recommended:
1. Coarse VOUT(Q)
2. Sens
3. VOUT(Q)
4. LOCK (only after all other parameters have been
programmed and validated, because this prevents any further
programming of the device)
Low-Noise Programmable Linear Hall Effect Sensor ICs with
Adjustable Bandwidth (50 kHz Maximum) and Analog Output
17
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A1362LKTTN-T | 功能描述:IC HALL EFFECT SENSOR LN 4-SIP RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 磁性 - 霍爾效應(yīng)，數(shù)字式開(kāi)關(guān)，線性，羅盤(pán) (IC) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 傳感范圍:20mT ~ 80mT 類型:旋轉(zhuǎn) 電源電壓:4.5 V ~ 5.5 V 電流 - 電源:15mA 電流 - 輸出（最大）:- 輸出類型:數(shù)字式，PWM，8.5 位串行 特點(diǎn):可編程 工作溫度:-40°C ~ 150°C 封裝/外殼:20-SSOP（0.209"，5.30mm 寬） 供應(yīng)商設(shè)備封裝:20-SSOP 包裝:Digi-Reel® 其它名稱:AS5132-HSST-500DKR |
| A1363LKTTN-10-T | 功能描述:IC HALL SENSOR 6.4-14MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:4-SIP 標(biāo)準(zhǔn)包裝:1 |
| A1363LKTTN-1-T | 功能描述:IC HALL SENSOR 0.6-1.3MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:模塊 標(biāo)準(zhǔn)包裝:1 |
| A1363LKTTN-2-T | 功能描述:IC HALL SENSOR 1.3-2.9MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:4-SIP 標(biāo)準(zhǔn)包裝:1 |
| A1363LKTTN-5-T | 功能描述:IC HALL SENSOR 2.9-6.4MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:4-SIP 標(biāo)準(zhǔn)包裝:1 |
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