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參數資料
| 型號： | AA022P2-00 |
| 廠商： | Alpha Industries, Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:26; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| 中文描述： | 21-23 GHz的砷化鎵MMIC中功率放大器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 126K |
| 代理商： | AA022P2-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
21–23 GHz GaAs MMIC
Medium Power Amplifier
Features
I
Single Bias Supply Operation (6 V)
I
22 dBm Typical P
1 dB
Output Power
at 23 GHz
I
14 dB Typical Small Signal Gain
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA022P2-00
Description
Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 22 dBm with 13 dB
associated gain guaranteed across frequency range
21–23 GHz. The chip uses Alpha’s proven 0.25
μ
m
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance.
Parameter
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
Min.
Typ.
2
280
14
-8
-9
22
23.5
11
69
Max.
300
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal Resistance
1
F = 21–23 GHz
F = 21–23 GHz
F = 21–23 GHz
F = 23 GHz
F = 23 GHz
F = 23 GHz
12
-6
-7
19
21
Electrical Specifications at 25°C (V
DS
= 6 V)
1. Calculated value based on measurement of discrete FET.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
0
3
1.576
3
0
1.572
1.700
0.850
0.000
RF OUT
RF IN
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
19 dBm
175
°
C
Absolute Maximum Ratings
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