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參數(shù)資料
| 型號(hào)： | AA035P3-00 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | GT 12C 6#12 6#12 SKT PLUG |
| 中文描述： | 31-35 GHz的砷化鎵單片驅(qū)動(dòng)放大器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 67K |
| 代理商： | AA035P3-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 1/01A
1
31–35 GHz GaAs MMIC
Driver Amplifier
Features
I
Single Bias Supply Operation (5 V)
I
19 dB Typical Small Signal Gain
I
17 dBm Typical P
1 dB
Output Power
at 35 GHz
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA035P3-00
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC driver amplifier has a typical P
1 dB
of 17 dBm with
18 dB associated gain at 35 GHz.The chip uses Alpha’s
proven 0.25
μ
m MESFET technology, which is based upon
MBE layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes.The amplifier is a self-bias design requiring a
single positive drain bias to one of any three bonding sites.
All chips are screened for S-parameters prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where high gain and power are
required.
Parameter
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
P
SAT
Θ
JC
Min.
Typ.
3
275
19
10.5
-14
-16
17
19
66
Max.
350
Unit
mA
dB
dB
dB
dB
dBm
dBm
°C/W
Drain Current
Small Signal Gain
Noise Figure
1
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Thermal Resistance
2
F= 31–35 GHz
F= 35 GHz
F= 31–35 GHz
F= 31–35 GHz
F= 35 GHz
F= 35 GHz
15
-10
-10
15
16
Electrical Specifications at 25°C (V
DS
= 5 V)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3.Typical represents the median parameter value across the specified
frequency range for the median chip.
0
0.000
1.250
1.905
3
1
2
3
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
19 dBm
175
°
C
Absolute Maximum Ratings
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| AA038H1-14 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwave/Millimeter Wave Amplifier |
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| AA038N1-A2 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:26-40 GHz Surface Mount Low Noise Amplifier |
| AA038N2-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:28-40 GHz GaAs MMIC Low Noise Amplifier |
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