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參數資料
| 型號： | AA038N1-00 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | GT 8C 2#0 6#12 PIN PLUG |
| 中文描述： | 28-40 GHz的砷化鎵MMIC低噪聲放大器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 134K |
| 代理商： | AA038N1-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
28–40 GHz GaAs MMIC
Low Noise Amplifier
Features
I
Single Bias Supply Operation (4.5 V)
I
3.8 dB Typical Noise Figure at 38 GHz
I
17 dB Typical Small Signal Gain
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF, DC and Noise Figure
Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA038N1-00, AA038N2-00
Description
Alpha’s four-stage reactively-matched 28–40 GHz GaAs
MMIC low noise amplifier has typical small signal gain of
17 dB with a typical noise figure of 3.8 dB at 38 GHz.The
chip uses Alpha’s proven 0.25
μ
m low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Parameter
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
Min.
Typ.
3
35
17
3.8
-10
-8
6
101
Max.
50
Unit
mA
dB
dB
dB
dB
dBm
°C/W
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
1
Thermal Resistance
2
F = 28–40 GHz
F = 38 GHz
F = 28–40 GHz
F = 28–40 GHz
F = 38 GHz
15
4.2
-6
-6
Electrical Specifications at 25°C (V
DS
= 4.5 V)
AA038N1-00
Parameter
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
Min.
Typ.
3
35
19
3.8
-14
-11
6
101
Max.
50
Unit
mA
dB
dB
dB
dB
dBm
°C/W
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
1
Thermal Resistance
2
F = 37–39.5 GHz
F = 38 GHz
F = 37–39.5 GHz
F = 37–39.5 GHz
F = 38 GHz
17
4.2
-6
-8
AA038N2-00
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3.Typical represents the median parameter value across the specified
frequency range for the median chip.
0
0.000
0.588
0
1
1
2
2
2
0.087
0.124
1.355
1
1
2
2
2
1.267
1.274
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
6 V
DC
10 dBm
175
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| AA038N1-99 | GT 4C 4#4 PIN PLUG |
| AA038N1-A2 | GT 4C 4#4 PIN PLUG |
| AA038N2-00 | GT 4C 4#4 PIN PLUG |
| AA038P2-00 | GT 4C 4#4 SKT PLUG |
| AA038P5-00 | GT 4C 4#4 SKT PLUG |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AA038N1-99 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:26-41 GHz Low Noise Amplifier |
| AA038N1-A2 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:26-40 GHz Surface Mount Low Noise Amplifier |
| AA038N2-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:28-40 GHz GaAs MMIC Low Noise Amplifier |
| AA038P1-00 | 制造商:SKYWORKS 制造商全稱:SKYWORKS 功能描述:36-39 GHz GaAs MMIC Driver Amplifier |
| AA038P2-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:37-40 GHz GaAs MMIC Driver Amplifier |
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