- 您現在的位置：買賣IC網 > PDF目錄376480 > AA1L3N (NEC Corp.) On-chip resistor NPN silicon epitaxial transistor For mid-speed switching PDF資料下載
參數資料
| 型號： | AA1L3N |
| 廠商： | NEC Corp. |
| 英文描述： | On-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上NPN硅外延電阻晶體管中速開關 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 91K |
| 代理商： | AA1L3N |
2002
Document No. D16163EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AA1L3N
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R
1
= 4.7 k
, R
2
= 10 k
)
Complementary transistor with AN1L3N
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5
V
Collector current (DC)
I
C(DC)
100
mA
Collector current (Pulse)
I
C(pulse)
*
200
mA
Total power dissipation
P
T
250
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 50 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 5.0 V, I
C
= 5.0 mA
35
60
100
DC current gain
h
FE2
**
V
CE
= 5.0 V, I
C
= 50 mA
80
230
Collector saturation voltage
V
CE(sat)
**
I
C
= 5.0 mA, I
B
= 0.25 mA
0.05
0.2
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.9
0.6
V
High level input voltage
V
IH
**
V
CE
= 0.2 V, I
C
= 5.0 mA
3.0
1.5
V
Input resistance
R
1
3.29
4.7
6.11
k
E-to-B resistance
R
2
7
10
13
k
Turn-on time
t
on
0.2
μ
s
Storage time
t
stg
5.0
μ
s
Turn-off time
t
off
V
CC
= 5 V, R
L
= 1 k
V
I
= 5 V, PW = 2
μ
s
duty cycle
≤
2 %
6.0
μ
s
**Pulse test PW
≤
350
μ
s, duty cycle
≤
2 %
相關PDF資料 |
PDF描述 |
|---|---|
| AA1L3Z | NPN SILICON TRANSISTOR |
| AA1L4L | NPN SILICON TRANSISTOR |
| AA1L4M | NPN SILICON TRANSISTOR |
| AA1L4Z | COMPOUND TRANSISTOR |
| AC03DJM | 3 A MOLD TRIAC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AA1L3N(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| AA1L3Z | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR |
| AA1L4L | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR |
| AA1L4L(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| AA1L4M | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發布緊急采購，3分鐘左右您將得到回復。