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參數資料
| 型號： | AD7892BR-1 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | ADC |
| 英文描述： | LC2MOS Single Supply, 12-Bit 600 kSPS ADC |
| 中文描述： | 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, PDSO24 |
| 封裝： | SOIC-24 |
| 文件頁數： | 3/14頁 |
| 文件大小： | 144K |
| 代理商： | AD7892BR-1 |
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25
°
C unless otherwise noted)
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND
AD7892-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
17 V
AD7892-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
AD7892-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
7 V
Reference Input Voltage to AGND . . . –0.3 V to V
DD
+ 0.3 V
Digital Input Voltage to DGND . . . . . –0.3 V to V
DD
+ 0.3 V
Digital Output Voltage to DGND . . . . –0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
Commercial (A, B Versions) . . . . . . . . . . . –40
°
C to +85
°
C
Extended (S Version) . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
Storage Temperature Range . . . . . . . . . . . . –65
°
C to +150
°
C
Parameter
A Versions
1
B Versions
S Version
2
Unit
Test Conditions/Comments
LOGIC OUTPUTS
Output High Voltage, V
OH
Output Low Voltage, V
OL
DB11–DB0
Floating-State Leakage Current
Floating-State Capacitance
4
Output Coding
AD7892-1 and AD7892-3
AD7892-2
4.0
0.4
4.0
0.4
4.0
0.4
V min
V max
I
SOURCE
= 200
μ
A
I
SINK
= 1.6 mA
±
10
15
±
10
15
±
10
15
μ
A max
pF max
Two’s Complement
Straight (Natural) Binary
CONVERSION RATE
Conversion Time
Track/Hold Acquisition Time
3
Conversion Time
Track/Hold Acquisition Time
3
1.47
0.2
1.6
0.4
1.47
0.2
1.6
0.4
μ
s max
μ
s max
μ
s max
μ
s max
AD7892-3
AD7892-3
AD7892-1 and AD7892-2
AD7892-1 and AD7892-2
1.68
0.32
POWER REQUIREMENTS
V
I
DD
Normal Operation
Standby Mode
6
AD7892-2
AD7892-3, AD7892-1
Power Dissipation
5
Normal Operation
Standby Mode
6
AD7892-2
AD7892-3, AD7892-1
+5
+5
+5
V nom
±
5% for Specified Performance
18
18
19
mA max
250
80
250
80
μ
A typ
μ
A max
100
typ 15
μ
A
90
90
95
mW max
V
DD
= +5 V. Typically 60 mW
1.25
400
1.25
400
mW typ
μ
W max
500
V
DD
= +5 V. Typically 75
μ
W
NOTES
1
Temperature ranges are as follows: A, B Versions: –40
°
C to +85
°
C; S Version: –55
°
C to +125
°
C.
2
S Version available on AD7892-1 and AD7892-2 only.
3
See Terminology.
4
Sample tested @ +25
°
C to ensure compliance.
5
These normal mode and standby mode currents are achieved with resistors (in the range 10 k
to 100 k
) to either DGND or V
DD
on Pins 8, 9, 16 and 17.
6
A conversion should not be initiated on the part within 30
μ
s of exiting standby mode.
Specifications subject to change without notice.
AD7892
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
°
C
Plastic DIP Package, Power Dissipation . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 105
°
C/W
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . +260
°
C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 70
°
C/W
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . +300
°
C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 75
°
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
REV. C
–3–
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