
REV. A
AD8072/AD8073
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8072 and AD8073 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.2 V
Internal Power Dissipation
2
AD8072 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.3 Watts
AD8072 8-Lead Small Outline (SO-8) . . . . . . . . . 0.9 Watts
AD8072 8-Lead
μ
SOIC (RM) . . . . . . . . . . . . . . . 0.6 Watts
AD8073 14-Lead Plastic (N) . . . . . . . . . . . . . . . . 1.6 Watts
AD8073 14-Lead Small Outline (R) . . . . . . . . . . . 1.0 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . .
±
1.25 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . .
Observe Power Derating Curves
Storage Temperature Range
N, R, RM Packages . . . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . .+300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic Package:
θ
JA
= 90
°
C/W
8-Lead SOIC Package:
θ
JA
= 140
°
C/W
8-Lead
μ
SOIC Package:
θ
JA
= 214
°
C/W
14-Lead Plastic Package:
θ
JA
= 75
°
C/W
14-Lead SOIC Package:
θ
JA
= 120
°
C/W
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Option
Model
AD8072ARM
AD8072ARM-REEL
AD8072ARM-REEL7 –40
°
C to +85
°
C 7" Reel 8-Lead
μ
SOIC
AD8072JN
0
°
C to +70
°
C
AD8072JR
0
°
C to +70
°
C
AD8072JR-REEL
0
°
C to +70
°
C
AD8072JR-REEL7
0
°
C to +70
°
C
AD8073JN
0
°
C to +70
°
C
AD8073JR
0
°
C to +70
°
C
AD8073JR-REEL
0
°
C to +70
°
C
AD8073JR-REEL7
0
°
C to +70
°
C
–40
°
C to +85
°
C 8-Lead
μ
SOIC
–40
°
C to +85
°
C 13" Reel 8-Lead
μ
SOIC RM-8
RM-8
RM-8
N-8
SO-8
SO-8
SO-8
N-14
8-Lead Plastic DIP
8-Lead SOIC
13" Reel 8-Lead SOIC
7" Reel 8-Lead SOIC
14-Lead Plastic DIP
14-Lead Narrow SOIC R-14
13" Reel 14-Lead SOIC R-14
7" Reel 14-Lead SOIC
R-14
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8072 and AD8073 is limited by the associated rise in junc-
tion temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass transition
temperature of the plastic, approximately +150
°
C. Exceeding
this limit temporarily may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by the
package. Exceeding a junction temperature of +175
°
C for an
extended period can result in device failure.
While the AD8072 and AD8073 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maximum
junction temperature (+150
°
C) is not exceeded under all condi-
tions. To ensure proper operation, it is necessary to observe the
maximum power derating curves shown in Figures 2 and 3.
M
–
AMBIENT TEMPERATURE
–
C
2.0
1.5
0
–
50
90
–
40
–
30
–
20
–
10
0
10
20
30
50 60
70
80
40
1.0
0.5
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
T
J
= 150 C
SOIC
Figure 2. AD8072 Maximum Power Dissipation vs.
Temperature
AMBIENT TEMPERATURE
–
C
2.5
2.0
0.5
–
50
90
–
40
M
–
–
30
–
20
–
10 0
10 20
30 40 50
60
80
1.5
1.0
70
14-LEAD SOIC
14-LEAD DIP PACKAGE
T
J
= 150 C
Figure 3. AD8073 Maximum Power Dissipation vs.
Temperature
WARNING!
ESD SENSITIVE DEVICE