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參數資料
| 型號： | AD8512 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| 中文描述： | 精密，非常低噪聲，低輸入偏置電流，高帶寬結型場效應管運算放大器 |
| 文件頁數： | 6/20頁 |
| 文件大小： | 497K |
| 代理商： | AD8512 |
AD8510/AD8512/AD8513
ABSOLUTE MAXIMUM RATINGS
Table 3. AD8510/AD8512/AD8513 Stress Ratings
1
Parameter
Supply Voltage
Input Voltage
Output Short-Circuit Duration to GND
Rev. E | Page 6 of 20
Rating
±18 V
±V
S
Observe Derating
Curves
65°C to +150°C
40°C to +125°C
65°C to +150°C
300°C
Storage Temperature Range
R, RM Packages
Operating Temperature Range
Junction Temperature Range
R, RM Packages
Lead Temperature Range
(Soldering, 10 sec)
Electrostatic Discharge (HBM)
2000 V
Table 4. Thermal Resistance
Package Type
8-Lead MSOP (RM)
8-Lead SOIC (R)
14-Lead SOIC (R)
14-Lead TSSOP (RU)
θ
JA2
210
158
120
180
θ
JC
45
43
36
35
Unit
°C/W
°C/W
°C/W
°C/W
1
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed in
the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
2
θ
JA
is specified for worst-case conditions, i.e., θ
JA
is specified for device
soldered in circuit board for surface-mount packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
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