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參數(shù)資料
型號: ADD8709ASTZ-REEL
廠商: ANALOG DEVICES INC
元件分類: 運動控制電子
英文描述: 18-Channel Gamma Buffer with Regulator
中文描述: 18 BUFFER AMPLIFIER, PQFP48
封裝: LEAD FREE, MO-026-BBC, LQFP-48
文件頁數(shù): 12/16頁
文件大小: 488K
代理商: ADD8709ASTZ-REEL
ADD8709
APPLICATION NOTES
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADD8709 package
is limited by the associated rise in junction temperature (T
J
)
on the die. At approximately 150°C, the glass transition temper-
ature, the properties of the plastic change. Even temporarily
exceeding this temperature limit may change the stresses that
the package exerts on the die, permanently shifting the para-
metric performance of the ADD8709. Exceeding a junction
temperature of 175°C for an extended period can result in
changes in the silicon devices, potentially causing failure.
Rev. 0 | Page 12 of 16
OPERATING TEMPERATURE RANGE
The maximum junction temperature is as follows:
T
J
=
T
AMB MAX
+
θ
JA
×
W
MAX
where:
T
AMB MAX
= maximum ambient temperature specified on the data
sheet.
θ
JA
= junction-to-ambient thermal resistance, in °C/watt.
W
MAX
= maximum power dissipated in the device, in watts.
For the ADD8709,
W
MAX
can be calculated with the following
equation:
W
MAX
=
V
DD
×
I
SYS
+
V
OUT
×
I
OUT
+
V
DO
×
I
O
where:
V
DD
×
I
SYS
= nominal system power requirements
V
OUT
×
I
OUT
= amplifier load power dissipation
V
DO
×
I
O
= regulator load power dissipation
Example 1
The estimated power consumption of the ADD8709 in extreme
cases is as follows:
V
DD
× I
SYS
= 15 V × 15 mA
V
OUT
× I
OUT
= (8 V × 5 mA/channel) × 18 channels
V
DO
× I
O
= 0.6 V × 5 mA
W
MAX
= (15 V × 15 mA) + (8 V × 5 mA/channel ×
18 channel) + (0.6 V × 5 mA) = 0.948 W
θ
JA
= 74.57°C/W,
T
AMB MAX
= 45°C
T
J
= 45°C + (74.57°C/W) × (0.948 W) = 115.7°C
Here, 150°C is the maximum junction temperature that is
guaranteed before the part breaks down, while 125°C is the
maximum process limit. Because
T
J
is < 150°C and < 125°C,
this example demonstrates a condition where the part should
perform within process limits.
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