欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: ADP1173
廠商: Analog Devices, Inc.
元件分類: DC/DC變換器
英文描述: Micropower DC-DC Converter
中文描述: 微功率DC - DC轉換
文件頁數: 11/16頁
文件大小: 478K
代理商: ADP1173
ADP1173
–11–
REV. 0
The internal structure of the I
LIM
circuit is shown in Figure 21.
Q1 is the ADP1173’s internal power switch, which is paralleled
by sense transistor Q2. The relative sizes of Q1 and Q2 are
scaled so that I
Q2
is 0.5% of I
Q1
. Current flows to Q2 through an
internal 80
resistor and through the R
LIM
resistor. These two
resistors parallel the base-emitter junction of the oscillator-
disable transistor, Q3. When the voltage across R1 and R
LIM
exceeds 0.6 V, Q3 turns on and terminates the output pulse. If
only the 80
internal resistor is used (i.e., the I
LIM
pin is con-
nected directly to V
IN
), the maximum switch current will be
1.5 A. Figures 4 and 5 gives R
LIM
values for lower current-limit
values.
OSCILLATOR
V
IN
SW2
SW1
R
LIM
DRIVER
80
(INTERNAL)
I
LIM
(EXTERNAL)
Q2
Q1
Q3
R1
Figure 21. Current Limit Operation
The delay through the current limiting circuit is approximately
2
μ
s. If the switch ON time is reduced to less than 4
μ
s, accu-
racy of the current trip-point is reduced. Attempting to program
a switch ON time of 2
μ
s or less will produce spurious responses
in the switch ON time. However, the ADP1173 will still provide
a properly regulated output voltage.
PROGRAMMING THE GAIN BLOCK
The gain block of the ADP1173 can be used as a low-battery
detector, error amplifier or linear post regulator. The gain block
consists of an op amp with PNP inputs and an open-collector
NPN output. The inverting input is internally connected to the
ADP1173’s 1.245 V reference, while the noninverting input is
available at the SET pin. The NPN output transistor will sink
about 100
μ
A.
2
V
IN
+5V
GND
ADP1173
R1
AO
SET
5
R2
100k
TO
PROCESSOR
6
1.245V
REF
7
V
BAT
V
LB
–1.245V
12.5μA
V
LB
= BATTERY TRIP POINT
R2 = 100k
R1 =
Figure 22. Setting the Low Battery Detector Trip Point
Figure 22 shows the gain block configured as a low battery
monitor. Resistors R1 and R2 should be set to high values to
reduce quiescent current, but not so high that bias current in the
SET input causes large errors. A value of 100 k
for R2 is a
good compromise. The value for R1 is then calculated from the
formula:
R
1
=
V
LOBATT
1.245
V
1.245
V
R
2
where V
LOBATT
is the desired low battery trip point. Since the
gain block output is an open-collector NPN, a pull-up resistor
should be connected to the positive logic power supply.
2
V
IN
5V
GND
ADP1173
R1
AO
SET
5
R2
47k
TO
PROCESSOR
6
1.245mV
REF
7
V
BAT
R3
1.6M
Figure 23. Adding Hysteresis to the Low Battery Detector
相關PDF資料
PDF描述
ADP1173AN Micropower DC-DC Converter
ADP1173AR Micropower DC-DC Converter
ADP1173AR-33 RECTIFIER SCHOTTKY DUAL 40A 60V 375A-ifsm 0.7V-vf 1mA-ir TO-3P 30/TUBE
ADP1173AR-5 RECTIFIER SCHOTTKY SINGLE 5A 40V 175A-ifsm 0.55V-vf 0.5mA-ir TO220AC 50/TUBE
ADP1610 1.2 MHz DC-DC Step-Up Switching Converter
相關代理商/技術參數
參數描述
ADP1173AN 制造商:Rochester Electronics LLC 功能描述:MICROPOWER DC-DC CONVERTER "ADJ" - Bulk
ADP1173AN-12 制造商:AD 制造商全稱:Analog Devices 功能描述:Micropower DC-DC Converter
ADP1173AN-3.3 制造商:Rochester Electronics LLC 功能描述:- Bulk
ADP1173AN-33 制造商:AD 制造商全稱:Analog Devices 功能描述:Micropower DC-DC Converter
ADP1173AN-5 制造商:Rochester Electronics LLC 功能描述:- Bulk
主站蜘蛛池模板: 斗六市| 翼城县| 张家口市| 从江县| 松溪县| 通辽市| 襄汾县| 喀喇| 昭通市| 广东省| 石柱| 会泽县| 随州市| 汪清县| 丹巴县| 昌黎县| 万州区| 东城区| 萍乡市| 西藏| 永嘉县| 西华县| 亚东县| 裕民县| 天长市| 闵行区| 钟祥市| 图木舒克市| 东安县| 宁都县| 明星| 阿合奇县| 博野县| 宾川县| 射阳县| 尉犁县| 清远市| 东阳市| 稻城县| 安平县| 南雄市|