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參數資料
| 型號： | AFM02N6-000 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | DIE-6 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 32K |
| 代理商： | AFM02N6-000 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Low Noise GaAs MESFET Chip
Features
s Low Noise Figure, 1.0 dB @ 12 GHz
s High Associated Gain, 9.5 dB @ 12 GHz
s High MAG, >12 dB @ 12 GHz
s 0.25
m Ti/Pd/Au Gates
s Passivated Surface
Description
The AFM02N6-000 low noise GaAs MESFET chip has
excellent gain and noise performance through K band,
making it suitable for a wide range of commercial and
military applications. The device employs 0.25
m
Ti/Pd/Au gates and surface passivation to ensure a
rugged, reliable part.
AFM02N6-000
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)VDS = 2 V, VGS = 0 V
25.0
40.0
90.0
mA
Transconductance (gm)
VDS = 2 V, IDS = 10 mA
30.0
60.0
mS
Pinch-off Voltage (VP)
VDS = 2 V, IDS = 0.3 mA
-0.5
-1.0
-2.0
V
Gate to Source
IGS = -200 A
-4.0
-5.5
V
Breakdown Voltage (Vbgs)
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 4 GHz
0.5
0.7
dB
Associated Gain (GA)
11.0
14.0
dB
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 12 GHz
1.0
1.4
dB
Associated Gain (GA)
8.0
9.5
dB
Output Power at 1 dB
VDS = 3 V, IDS = 30 mA
12.0
dBm
Compression (P1 dB)
Thermal Resistance (
ΘJC)
Channel to Infinite Heat Sink
260.0
°C/W
Electrical Specifications at 25°C
Dims
(
ms):
X
=
400,
Y
=
620
400
300
200
100
0
1 cm = 38.7
m
0
100
200
300
400
500
600
Characteristic
Value
Drain to Source Voltage (VDS)
4 V
Gate to Source Voltage (VGS)
-2 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
100
A
Total Power Dissipation (PT)
200 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
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