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參數資料
| 型號： | AFM04P2-000 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | Ka Band Power GaAs MESFET Chip |
| 中文描述： | Ka波段功率GaAs MESFET芯片 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 43K |
| 代理商： | AFM04P2-000 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
Ka Band Power GaAs MESFET Chip
Features
I
21 dBm Output Power @ 18 GHz
I
High Associated Gain, 9 dB @ 18 GHz
I
High Power Added Efficiency, 25%
I
Broadband Operation, DC–40 GHz
I
0.25
μ
m Ti/Pd/Au Gates
I
Passivated Surface
I
Through-Substrate Via Hole Grounding
Description
The AFM04P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
μ
m and a
total gate periphery of 400
μ
m. The device has
excellent gain and power performance through 40 GHz,
making it suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. It
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part. Through-
substrate via holes are incorporated into the chip to
facilitate low inductance grounding of the source for
improved high frequency and high gain performance.
AFM04P2-000
Parameter
Test Conditions
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
Max.
190.0
Unit
mA
mS
-V
-V
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-off Voltage (V
P
)
Gate to Drain
Breakdown Voltage (V
bgd
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (
η
add)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (
η
add)
Thermal Resistance (
Θ
JC
)
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1 mA
I
GD
= -400
μ
A
5.0
21.0
dBm
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
25.0
20.0
dB
%
dBm
V
DS
= 5 V, I
DS
= 70 mA, F = 30 GHz
5.0
15.0
dB
%
°C/W
T
BASE
= 25°C
250.0
Electrical Specifications at 25°C
0
0.327 mm
Drain
Gate
0.655 mm
0.110 mm
0.110 mm
Characteristic
Value
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
6 V
-4 V
I
DSS
1 mA
700 mW
-65 to +150
°
C
175
°
C
Absolute Maximum Ratings
Chip thickness = 0.1 mm.
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| AFM06P2-000 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Ka Band Power GaAs MESFET Chip |
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