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參數資料
| 型號： | AGR1806EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | AGR1806EF |
Preliminary Product Brief
May 2003
AGR18060E
60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18060E is high-voltage, gold-metalized, lat-
erally diffused metal oxide semiconductor (LDMOS)
RF power transistor suitable for global system for
mobile communication (GSM), enhanced data for
global evolution (EDGE), and multicarrier class AB
power amplifier applications. This device is manufac-
tured using advanced LDMOS technology offering
state-of-the-art performance and reliability. It is pack-
aged in an industry-standard package and is capable
of delivering a minimum output power of 60 W which
makes it ideally suited for today’s wireless base sta-
tion RF power amplifier applications.
Figure 1. Available Packages
Features
s
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, POUT = 15 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
s
Typical performance over entire DCS band:
— P1dB: 60 W typ.
— Power gain: @ P1dB = 14 dB.
— Efficiency @ P1dB = 45% typ.
— Return loss: –12 dB.
s
High-reliability gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
60 W minimum output power.
s
Device can withstand 10:1 voltage standing wave
ration (VSWR) at 26 Vdc, 1.840 GHz, 60 W contin-
uous wave (CW) output power.
s
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR18060EU
AGR18060EF
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR18060EU
AGR18060EF
R
θJC
R
θJC
1.0
TBD
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current—Continuous
ID
6.2
Adc
Total Dissipation at TC = 25 °C:
AGR18060EU
AGR18060EF
PD
175
TBD
W
Derate Above 25
°C:
AGR18060EU
AGR18060EF
—
1.0
TBD
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
Device
Minimum
Threshold
Class
HBM
CDM
HBM
CDM
AGR18060E
——
1TBD
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AGR18090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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