- 您現在的位置：買賣IC網 > PDF目錄67358 > AGR19030EF L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | AGR19030EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 217K |
| 代理商： | AGR19030EF |
Preliminary Data Sheet
June 2004
AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19030EF is a 30 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Figure 1. AGR19030EF (flanged) Package
N-CDMA Features
■
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 350 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 6 W.
— Power gain: 16 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49 dBc.
EDGE Features
■
Typical EDGE performance, 1960 MHz, 26 V,
IDQ = 250 mA:
— Output power (POUT): 12 W typical.
— Power gain: 15.5 dB.
— Efficiency: 38% typical.
— Modulation spectrum:
@ ±400 kHz = –61 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.2%
GSM Features
■
Typical performance over entire GSM band:
— P1dB: 30 W typical.
— Continuous wave (CW) power gain: @ P1dB =
15 dB.
— CW efficiency @ P1dB = 55% typical.
— Return loss: –12 dB.
Device Performance Features
■
High-reliability, gold-metalization process.
■
Low hot carrier injection (HCI) induced bias drift
over 20 years.
■
Internally matched.
■
High gain, efficiency, and linearity.
■
Integrated ESD protection.
■
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 30 W CW
output power.
■
Large signal impedance parameters available.
ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19030EF
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
相關PDF資料 |
PDF描述 |
|---|---|
| AGR19030EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21180EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21180EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AH118-89G | 60 MHz - 3500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AH125-89G | 400 MHz - 3600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AGR19045EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
發布緊急采購，3分鐘左右您將得到回復。