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參數資料
| 型號： | AGR26125EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數： | 8/9頁 |
| 文件大小： | 252K |
| 代理商： | AGR26125EF |
8
Agere Systems Inc.
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
August 2004
AGR26125E
Preliminary Data Sheet
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain.
AGR26125EU
AGR26125EF
Label Notes:
■
M before the part number denotes model program. X before the part number denotes engineering prototype.
■
The last two letters of the part number denote wafer technology and package type.
■
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■
ZZZZZZZ = seven-digit assembly lot number on production parts.
■
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
AGERE
M-AGR21125U
YYWWUR
ZZZZZZZ
AGERE
AGR26125XU
YYWWUR XXXXX
ZZZZZZZ
1
2
3
1
2
3
AGERE
M-AGR21125F
YYWWUR
ZZZZZZZ
1
3
2
AGERE
AGR26125XF
YYWWUR XXXXX
ZZZZZZZ
1
2
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AGR26125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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