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參數資料
| 型號： | AGRA10GM |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 255K |
| 代理商： | AGRA10GM |
Preliminary Data Sheet
September 2004
AGRA10GM Plastic Overmold
10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGRA10 is a broadband general-purpose, high-
voltage, gold-metalized, laterally diffused metal oxide
semiconductor (LDMOS) plastic overmold RF power
transistor suitable for personal cellular band IS-95
865 MHz to 895 MHz, global system for mobile com-
munications/enhanced data GSM environment
(GSM/EDGE) 921 MHz to 960 MHz, and power sup-
ply switching applications from 100 MHz to 1 GHz.
Figure 1. AGRA10 Gull-Wing Package
Performance Features
865 MHz to 895 MHz
■
Continuous wave (CW) performance @ 28 V:
— Output power: 2 W.
— Power gain: 21 dB.
— Efficiency: 27%.
— Return loss: –10 dB.
921 MHz to 960 MHz
■
CW performance @ 26 V:
— Output power: 2 W.
— Power gain: 20.5 dB.
— Efficiency: 27%.
— Return loss: –10 dB.
Device Features
■
High-reliability, gold-metalization process.
■
Low hot carrier injection (HCI) induced bias drift
over 20 years.
■
High gain, efficiency, and linearity.
■
Integrated ESD protection.
■
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) with 10 W CW output power.
■
Large signal impedance parameters available.
■
Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traffic codes 8—13. Peak/aver-
age (P/A) = 9.72 dB at 0.01% probability on CCDF:
— Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
750 kHz offset: –45 dBc
1.98 MHz offset: –60 dBc.
Table 1. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGRA10
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
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| AGRF1100 | 功能描述:可復位保險絲 AGRF1100 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1100-2 | 功能描述:可復位保險絲 AGRF1100-2 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
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