- 您現在的位置：買賣IC網 > PDF目錄48364 > AGRA10GM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | AGRA10GM |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-8 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 255K |
| 代理商： | AGRA10GM |
2
Agere Systems Inc.
10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET
September 2004
AGRA10GM Plastic Overmold
Preliminary Data Sheet
Electrical Characteristics
Table 2. Thermal Characteristics
Table 3. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics, 865 MHz—895 MHz, 921 MHz—960 MHz
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θJC
5.5
°C/W
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C
PD
31.8
W
Derate Above 25
°C—
0.18
W/°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =25A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
0.3
Adc
Zero Gate Voltage Drain Leakage Current (VDS =26 V, VGS =0V)
IDSS
——
0.9
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—0.65
—
S
Gate Threshold Voltage (VDS =10V, ID =43A)
VGS(TH)
—
3.3
4.2
Vdc
Gate Quiescent Voltage (VDS =26 V, ID =115 mA)
VGS(Q)
—3.7
—
Vdc
Drain-source On-voltage (VGS =10V, ID =0.5 A)
VDS(ON)
—0.56
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (VDS =26V, VGS =0, f=1.0 MHz)
CRSS
—0.25
—
pF
Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
COSS
—5.15
—
pF
Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
CISS
—18.2
—
pF
相關PDF資料 |
PDF描述 |
|---|---|
| AGRA10GM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AH1601DI | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
| AH1601DS | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
| AH1602DI | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
| AH1602DS | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AGRF1000 | 功能描述:可復位保險絲 AGRF1000 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1000-2 | 功能描述:可復位保險絲 AGRF1000-2 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1000-AP | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:PolySwitch Resettable Devices Automotive Devices |
| AGRF1100 | 功能描述:可復位保險絲 AGRF1100 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1100-2 | 功能描述:可復位保險絲 AGRF1100-2 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
發布緊急采購，3分鐘左右您將得到回復。