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參數資料
型號: AH101-G
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 放大器
英文描述: 50 MHz - 1500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: GREEN, SOT-89, 4 PIN
文件頁數: 1/5頁
文件大小: 224K
代理商: AH101-G
TriQuint Semiconductor, Inc Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
May 2009
AH101
Medium Power, High Linearity Amplifier
Product Features
50 – 1500 MHz
+47 dBm Output IP3
13.5 dB Gain
+26.5 dBm P1dB
MTTF > 1000 Years
Internally Matched
Single +9 V Supply
Lead-free/RoHS-compliant
SOT-89 Package
Applications
Mobile Infrastructure
CATV / DBS
Defense / Homeland Security
Product Description
The AH101 is a medium power gain block that offers
excellent dynamic range in a low-cost surface mount
package. The combination of a single supply voltage and
an internally matched device makes it ideal for both narrow
and broadband applications. Only dc blocking and bypass
capacitors as well as an RF choke are required for operation.
Superior thermal design allows the product to achieve +46
dBm IP3 performance at a mounting temperature of +85 °C
with an associated MTTF of greater than 1000 years. The
AH101 is available in the environmentally-friendly lead-
free/RoHS-compliant SOT-89 package.
The broadband
amplifier uses a high reliability GaAs MESFET technology
and is targeted for applications where high linearity is
required.
Functional Diagram
RF IN
GND
RF OUT
GND
1
2
3
4
Function
Pin No.
Input
1
Ground
2
Output / Bias
3
Ground
4
Specifications
(1)
Parameter
Units Min
Typ
Max
Operational Bandwidth
MHz
50
1500
Test Frequency
MHz
800
Gain
dB
12
13.5
Input Return Loss
dB
20
Output Return Loss
dB
15
Output IP3
(2)
dBm
+43
+47
Output P1dB
dBm
+26.5
Noise Figure
dB
3.5
Operating Current Range
mA
170
200
230
Supply Voltage
V
+9
1. Test conditions unless otherwise noted: T = 25 C, Vdd = +9 V in a 50 ohm test fixture.
2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-55 to +150 °C
DC Voltage
+11 V
RF Input Power (continuous)
+18 dBm
Junction Temperature
160 °C
Thermal Resistance, Rth
25 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter
Units
Typical
Frequency
MHz
50
450
900
1500
Gain
dB
13.6
13.8
13.5
12.7
S11
dB
-23
-27
-21
-14
S22
dB
-8
-14
-18
-16
Output P1dB
dBm
+26.1
+26.5
+25
Output IP3
(2)
dBm
+45
+47
Output IP2
dBm
+63
+60
+59
Noise Figure
dB
4.4
3.4
3.6
4.2
Supply Current
mA
200
Supply Voltage
V
+9
Ordering Information
Part No.
Description
AH101-G
Med. Power High Linearity Amplifier
(lead-free/RoHS-compliant SOT-89 Pkg)
AH101-PCB
50-900 MHz Fully Assembled Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
相關PDF資料
PDF描述
AH103A-G 60 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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相關代理商/技術參數
參數描述
AH101-G-AGILENT 制造商:TriQuint Semiconductor 功能描述:RF & MW POWER AMPLIFIER
AH101-PCB 功能描述:射頻開發工具 50-1500MHz Eval Brd 13.5dB Gain RoHS:否 制造商:Taiyo Yuden 產品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH101TRG 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
AH102 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium Power, High Linearity Amplifier
AH102A 制造商:WJCI 制造商全稱:WJCI 功能描述:Medium Power, High Linearity Amplifier
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