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參數(shù)資料
| 型號： | AM026S1-00 |
| 元件分類： | 混頻器 |
| 英文描述： | 23000 MHz - 33000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER |
| 封裝： | CHIP |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 119K |
| 代理商： | AM026S1-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [978] 241-7906 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 11/01A
23–33 GHz GaAs MMIC
Fundamental Up/Down Converter Mixer
Features
■ Low Conversion Loss, 8.0 dB
■ High LO to RF Isolation, 26 dB
■ High LO to IF Isolation, 28 dB
■ Final Production Size (1.6 mm x 0.95 mm)
■ No DC Bias Required
Chip Outline
AM026S1-00
Description
Alpha’s single balanced fundamental mixer IC has a typical
conversion loss of 8 dB at an LO power level as low as
12 dBm over the band 23–33 GHz. The chip uses Alpha’s
proven Schottky diode technology and is based upon MBE
layers for the highest uniformity and repeatability. The
diodes employ surface passivation to ensure a rugged,
reliable part with through-substrate via holes and gold-
based backside metallization to facilitate an epoxy die
attach process. All chips are screened for DC diode
parameters and lot samples are RF measured to
guarantee performance
Parameter
Condition
Symbol
Min.
Typ.2
Max.
Unit
RF and LO Frequency Range
FRF, FLO
23
33
GHz
IF Frequency Range
FIF
0.5
3
GHz
LO Power Level1
FRF, FLO = 23–33 GHz,
PLO
12
15
dBm
FIF = 0.5–3 GHz
Conversion Loss
FRF, FLO = 23–33 GHz,
LC
8
dB
(Up and Down Conversion)1
FIF = 0.5–3 GHz
LO Return Loss1
FRF, FLO = 23–33 GHz,
RLLO
7dB
FIF = 0.5–3 GHz
RF Return Loss1
FRF, FLO = 23–33 GHz,
RLRF
9dB
FIF = 0.5–3 GHz
LO to RF Isolation1
FRF, FLO = 23–33 GHz,
ISOLO-RF
26
dB
FIF = 0.5–3 GHz
LO to IF Isolation1
FRF, FLO = 23–33 GHz,
ISOLO-IF
28
dB
FIF = 0.5–3 GHz
RF Input 1 dB Compression Point1
FRF, FLO = 23–33 GHz,
P1 dB
6
dBm
FIF = 0.5–3 GHz
Two Parallel Diode Series Resistance
RS
1.5
Electrical Specifications at 25°C
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0.440
1.040
0.572
0.222
1.108
1.593
1.800
0.090
Characteristic
Value
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +150°C
Total Input Power (RF + LO)
20 dBm
ESD Level Per ANSI
TBD
Absolute Maximum Ratings
Preliminary
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