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參數資料
| 型號： | AM1011-400 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.500 INCH, HERMETIC SEALED, METAL CERAMIC, S038, BIGPAC-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 168K |
| 代理商： | AM1011-400 |
September 1992
L-BAND AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
15:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 400 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The AM1011-400 device is a high power Class
C transistor specifically designed for TCAS and
Mode-S pulsed output and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 15:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1011-400 is supplied in the BIGPAC Her-
metic Metal/Ceramic package Input/Output match-
ing structures.
PIN CONNECTION
BRANDING
1011-400
ORDER CODE
AM1011-400
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 100C)
880
W
IC
Device Current*
24
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.17
°C/W
*Applies only to rated RF amplifier operation
AM1011-400
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
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相關代理商/技術參數 |
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|---|---|
| AM1011-500 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
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| AM101-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Silicon Miniature Single-Phase Bridge |
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