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參數資料
| 型號： | Am29LV010BB-45RFEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 3.0伏特，只有統一部門閃存 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 66K |
| 代理商： | AM29LV010BB-45RFEB |
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 22140
Rev: A Amendment/0
Issue Date: April 1998
Am29LV010B
1 Megabit (128 K x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
s Manufactured on 0.35 m process technology
s High performance
— Full voltage range: access times as fast as 55 ns
— Regulated voltage range: access times as fast
as 45 ns
s Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
s Flexible sector architecture
— Eight 16 Kbyte
— Supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Unlock Bypass Mode Program Command
— Reduces overall programming time when
issuing multiple program command sequences
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Minimum 1,000,000 write cycle guarantee per
sector
s Package option
— 32-pin TSOP
— 32-pin PLCC
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Erase Suspend/Erase Resume
— Supports reading data from or programming
data to a sector that is not being erased
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| AM29F800 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29F800BT-90DGC1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29F800BB-90DGC1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| Am29LV640DH90REE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DH90REE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV017B-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 2M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV017D120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV017D-120EC | 制造商:SCRAFT 功能描述: 制造商:SPANSION, INC. 功能描述: |
| AM29LV017D-120EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV017D-70EC | 制造商:Advanced Micro Devices 功能描述: |
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