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參數資料
型號: Am29LV081-150FIB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數: 1/35頁
文件大小: 439K
代理商: AM29LV081-150FIB
PRELIMINARY
Publication#
20977
Issue Date:
March 1998
Rev:
C
Amendment/
+1
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV081
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Optimized architecture for Miniature Card and
mass storage applications
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
I
Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector (using
programming equipment) to prevent any
program or erase operations within that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
I
Package option
— 40-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料
PDF描述
Am29LV081-90REE 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081-90REI 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081-90RFC Evaluation Board for LM3678 High-Performance, Miniature 1.5A Step-Down DC-DC Converter for Handheld Applications; ; Qty per Container: 1
Am29LV081-90RFCB 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Am29LV081-90RFE 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
相關代理商/技術參數
參數描述
AM29LV081B-120ED 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB
AM29LV081B-120ED 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29LV081B-70EC 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述:
AM29LV081B-70ED 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP
AM29LV081B-70ED 制造商:Spansion 功能描述:Flash Memory IC
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