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參數資料
| 型號： | AM29LV128MH90RFF |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | REVERSE, MO-142EC, TSOP-56 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 273K |
| 代理商： | AM29LV128MH90RFF |
ADVANCE INFORMATION
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 25270
Rev: A Amendment/+2
Issue Date: April 26, 2002
Refer to AMD’sWebsite (www.amd.com) for the latest information.
Am29LV128M
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
s Single power supply operation
— 3 volt read, erase, and program operations
s VersatileI/O
control
— Device generates and tolerates voltages on CE# and
DQ I/O as determined by the voltage on the V
IO pin;
operates from 1.65 to 3.6 V
s Manufactured on 0.23 m MirrorBit process
technology
s SecSi
(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
s Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
s Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
s Minimum 100,000 erase cycle guarantee per sector
s 20-year data retention at 125
°C
PERFORMANCE CHARACTERISTICS
s High performance
— 90 ns access time
— 25 ns page read times
— 0.4 s typical sector erase time
— 5.9 s typical write buffer word programming time:
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
s Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 A typical standby mode current
s Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
s Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
s Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID-level method of
changing code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
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| AM29LV128ML113REI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 56-Pin TSOP |
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| AM29LV128ML-123REI | 制造商:Advanced Micro Devices 功能描述:8M X 16 FLASH 3V PROM, 120 ns, PDSO56 |
| AM29LV160BT-120EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP Tray |
| AM29LV160BT80SC | 制造商:AMD 功能描述:* |
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