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參數(shù)資料
型號(hào)： Am29LV400T-150WAEB
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512畝x 8-Bit/256畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 1/40頁(yè)
文件大?。?/td> 516K
代理商： AM29LV400T-150WAEB
PRELIMINARY
Publication# 20514
Rev: C Amendment/+1
Issue Date: March 1998
Am29LV400
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
s High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
s Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top or bottom boot block configurations
available
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
s Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關(guān)PDF資料
PDF描述
Am29LV400B-150WAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29F800BT-55FEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29F800BB-55FEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29LV010BB-55FEB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Am29F800BT-55FIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
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AM29LV640DL90RZI 制造商:Advanced Micro Devices 功能描述:
AM29LV640DU-90NI 制造商:Advanced Micro Devices 功能描述:
AM29LV640DU90REI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays
AM29LV640DU-90RWHIT 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063)
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