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參數資料
型號: AO4600L
廠商: ALPHA AND OMEGA SEMICONDUCTOR
元件分類: JFETs
英文描述: 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: GREEN, SOIC-8
文件頁數: 1/10頁
文件大小: 521K
代理商: AO4600L
Symbol
Max p-channel
Units
VDS
V
VGS
V
IDM
TJ, TSTG
°C
Symbol
Typ
Max
48
62.5
74
110
RθJL
35
40
-30
±12
Gate-Source Voltage
A
Continuous Drain
Current
A
TA=25°C
ID
TA=70°C
Pulsed Drain Current
B
W
6.9
5.8
40
2
1.44
-4.2
-5
2
1.44
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
30
-30
±12
Drain-Source Voltage
TA=70°C
Power Dissipation
TA=25°C
PD
Steady-State
°C/W
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
°C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
Maximum Junction-to-Ambient
A
AO4600
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 6.9A (VGS = 10V) -5A (VGS = -10V)
RDS(ON)
< 27m
< 49m
(VGS =- 10V)
< 32m
< 64m
(VGS =- 4.5V)
< 50m
< 120m
(VGS = -2.5V)
General Description
The AO4600 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
G1
S1
G2
S2
D1
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AO4600 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AO4622 20 V, 0.023 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AO6409 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO7410 1700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AOI452A 55 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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