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參數資料
| 型號： | AO4620 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 188K |
| 代理商： | AO4620 |
Symbol
Max p-channel
Units
VDS
V
VGS
V
IDM
IAR
A
EAR
mJ
TJ, TSTG
°C
Symbol
Device
Typ
Max
Units
n-ch
50
62.5
°C/W
n-ch
80
100
°C/W
RθJL
n-ch
32
40
°C/W
p-ch
50
62.5
°C/W
p-ch
80
100
°C/W
RθJL
p-ch
32
40
°C/W
Junction and Storage Temperature Range
-55 to 150
TA=70°C
Power Dissipation
F
TA=25°C
PD
Avalanche Current
B
13
17
1.44
A
Continuous Drain
Current
F
TA=25°C
ID
TA=70°C
Pulsed Drain Current
B
-30
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
W
7.2
6.2
30
2
1.44
Steady-State
30
-30
±20
Drain-Source Voltage
±20
Gate-Source Voltage
-4.5
-5.3
2
t ≤ 10s
RθJA
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Repetitive avalanche energy 0.3mH
B
25
43
Maximum Junction-to-Lead
C
Steady-State
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
AO4620
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel
p-channel
V
DS (V) = 30V
-30V
I
D = 7.2A (VGS=10V)
-5.3A (V
GS = -10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS=10V)
< 38m
(V
GS = -10V)
< 36m
(V
GS=4.5V)
< 60m
(V
GS = -4.5V)
100% UIS tested
100% Rg tested
General Description
The AO4620 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON) and low gate
charge. The complementary MOSFETs may be used
in inverter and other applications.
G1
D1
S1
n-channel
p-channel
G2
D2
S2
G1
S1
G2
S2
D1
D2
2
4
5
1
3
8
6
7
Top View
SOIC-8
Top View
Bottom View
Pin1
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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PDF描述 |
|---|---|
| AO4710 | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4800B | 6900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4812 | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4813 | 7100 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4822 | 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AO4620_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4621 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4622 | 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4622_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET |
| AO4624 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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