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參數(shù)資料
| 型號(hào)： | AO4932 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 668K |
| 代理商： | AO4932 |
AO4932
Asymmetric Dual N-Channel MOSFET
General Description
Product Summary
FET1(N-Channel)
FET2(N-Channel)
VDS= 30V
30V
ID= 9A (VGS=10V)
8A (VGS=10V)
RDS(ON)
< 15.8m
(VGS=10V)
< 19m
(VGS=10V)
< 19.6m
(VGS=4.5V)
< 23m
(VGS=4.5V)
100% UIS Tested
100% Rg Tested
The AO4932 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
SOIC-8
Top View
Bottom View
SRFET TM
G1
D2
S2/D1
G2
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D2
D1
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t
≤ 10s
Steady-State
RθJL
Avalanche Current
C
9
ID
TA=25°C
TA=70°C
7.2
40
27
19
W
V
±12
Absolute Maximum Ratings TA=25°C unless otherwise noted
Max FE1
Drain-Source Voltage
30
Max FET2
Gate-Source Voltage
Units
Parameter
Pulsed Drain Current
C
Continuous Drain
Current
30
8
A
±20
V
6.5
40
°C
A
mJ
Avalanche energy L=0.1mH
C
-55 to 150
TA=70°C
36
Junction and Storage Temperature Range
Power Dissipation
B
2
1.3
PD
TA=25°C
1.3
18
2
Thermal Characteristics
Parameter
Typ
Max
Units
Maximum Junction-to-Lead
°C/W
Maximum Junction-to-Ambient
A D
32
40
74
90
RθJA
48
Maximum Junction-to-Ambient
A
62.5
°C/W
SOIC-8
Top View
Bottom View
Pin1
SRFET TM
S1
G1
D2
S2/D1
G2
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G2
D2
S2
G1
D1
S1
Rev 3: Dec 2010
www.aosmd.com
Page 1 of 9
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相關(guān)代理商/技術(shù)參數(shù) |
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| AO4932_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
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