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參數資料
| 型號： | AP1003BST |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 17.3 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, GREENFET PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 160K |
| 代理商： | AP1003BST |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lead-Free Package
BVDSS
30V
▼ Low Conductance Loss
RDS(ON)
4.7mΩ
▼ Low Profile ( < 0.7mm )
ID
17.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
ID@TC=25℃
A
IDM
A
PD@TA=25℃
W
PD@TA=70℃
W
PD@TC=25℃
W
EAS
mJ
IAR
A
TSTG
℃
TJ
℃
Rthj-c
Maximum Thermal Resistance, Junction-ambient
4
3
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
58
℃
/W
Data and specifications subject to change without notice
Thermal Data
Storage Temperature Range
1
Total Power Dissipation
3
Single Pulse Avalanche Energy
5
-40 to 150
Operating Junction Temperature Range
-40 to 150
24
Avalanche Current
1
Total Power Dissipation
3
1.4
Total Power Dissipation
4
Continuous Drain Current, VGS @ 10V
3
14.3
Pulsed Drain Current
1
150
Continuous Drain Current, VGS @ 10V
4
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
17.3
Parameter
Rating
Drain-Source Voltage
30
AP1003BST
Preliminary
75
28.8
2.2
20100809pre
42
G
D
S
The AP1003BST used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
The GreenFET
TM package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
GreenFET
TM
G
S
DD
ST
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