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參數(shù)資料
| 型號(hào)： | AP18N20GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 155K |
| 代理商： | AP18N20GI |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
200V
▼ Simple Drive Requirement
RDS(ON)
170mΩ
▼ Fast Switching Characteristic
ID
18A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃
/W
Data and specifications subject to change without notice
200805264
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
34.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.28
Continuous Drain Current, VGS @ 10V
9.5
Pulsed Drain Current
1
60
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
18
Parameter
Rating
Drain-Source Voltage
200
1
AP18N20GI
RoHS-compliant Product
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
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