欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: AP2314GN-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: 小信號晶體管
英文描述: 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數: 2/4頁
文件大小: 95K
代理商: AP2314GN-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
BVDSS/Tj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=3.5A
-
75
m
VGS=2.5V, ID=1.2A
-
125
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.2
V
gfs
Forward Transconductance
VDS=5V, ID=3A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=16V ,VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=3A
-
4
7
nC
Qgs
Gate-Source Charge
VDS=16V
-
0.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3,VGS=5V
-
10
-
ns
tf
Fall Time
RD=15
-3
-
ns
Ciss
Input Capacitance
VGS=0V
-
230
370
pF
Coss
Output Capacitance
VDS=20V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.2A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=3A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2314GN-HF
相關PDF資料
PDF描述
AP2334GN-HF 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2612GY-HF 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
AP26G40GEO-HF 400 V, N-CHANNEL IGBT
AP2761I-H 6 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP2R803GH 75 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
相關代理商/技術參數
參數描述
AP2314GN-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 20V 75MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 20V, 75MOHM, SOT-23 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 20V, 75MOHM, SOT-23, Transistor Polarity:N Channel, Continuous Drai
AP2315 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR
AP2315GEN 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2315R-2.5TRE1 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR
AP2315R-3.3TRE1 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR
主站蜘蛛池模板: 汽车| 黄大仙区| 峡江县| 布拖县| 大名县| 保定市| 白山市| 灵川县| 新营市| 东乡县| 新郑市| 尤溪县| 遂昌县| 车险| 墨玉县| 安宁市| 红河县| 浦江县| 广德县| 水城县| 平阴县| 股票| 偃师市| 双辽市| 兴山县| 土默特右旗| 黑河市| 台前县| 西贡区| 四平市| 呼玛县| 定陶县| 吴忠市| 女性| 柘城县| 新宁县| 陆丰市| 鹤壁市| 金华市| 乐亭县| 肃南|