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參數(shù)資料
型號(hào): AP2R803GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 75 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大小: 92K
代理商: AP2R803GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
2.8mΩ
▼ Fast Switching Characteristic
ID
75A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
/W
Rthj-a
62.5
/W
Data & specifications subject to change without notice
AP2R803GH
104
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
30
Total Power Dissipation
Gate-Source Voltage
+20
Continuous Drain Current
4
75
Continuous Drain Current
4
75
Pulsed Drain Current
1
300
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
200903042
1
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
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