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參數資料
| 型號： | AP4232GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 207K |
| 代理商： | AP4232GM-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-Resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
22mΩ
▼ Dual N MOSFET Package
ID
7.8A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
7.8
0.016
AP4232GM-HF
6.2
Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
30
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Linear Derating Factor
Storage Temperature Range
200901203
Halogen-Free Product
2
-55 to 150
1
30
+20
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
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