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參數(shù)資料
型號: AP4430GEM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/5頁
文件大小: 249K
代理商: AP4430GEM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Fast Switching Characteristic
RDS(ON)
4mΩ
▼ Low On-resistance
ID
20A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
/W
Data and specifications subject to change without notice
200806053
1
AP4430GEM
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
±12
Continuous Drain Current
3
20
Continuous Drain Current
3
16
Pulsed Drain Current
1
80
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching,ruggedized device
design, ultra low on-resistance and cost-effectiveness.
S
G
D
SO-8
S
G
D
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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