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參數(shù)資料
型號: AP4438GSM-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/4頁
文件大小: 59K
代理商: AP4438GSM-HF
Advanced Power
N-CHANNEL MOSFET WITH SCHOTTKY
Electronics Corp.
DIODE
▼ Simple Drive Requirement
BVDSS
30V
▼ Good Recovery Time
RDS(ON)
11.5mΩ
▼ Fast Switching Performance
ID
11.7A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
VKA
V
IF@TA=25℃
A
IFM
A
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
50
℃/W
Rthj-a
60
℃/W
Data and specifications subject to change without notice
Storage Temperature Range
Parameter
Max Power Dissipation (MOSFET)
2.5
Thermal Data
1
PD@TA=25℃
Pulsed Diode Forward Current
25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Max Power Dissipation (Schottky)
2.0
AP4438GSM-HF
Rating
30
+12
11.7
Maximum Thermal Resistance, Junction-ambient
3(Schottky)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3, V
GS @ 10V
Continuous Drain Current
3, V
GS @ 10V
30
201008121
Halogen-Free Product
1
Parameter
9.3
Pulsed Drain Current
1
50
Maximum Thermal Resistance, Junction-ambient
3(MOSFET)
Schottky Reverse Voltage
Continous Forward Current
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
Schottky Diode
相關(guān)PDF資料
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