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參數(shù)資料
| 型號： | AP4430GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 249K |
| 代理商： | AP4430GEM |
AP4430GEM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
0
20
40
60
80
0
0.4
0.8
1.2
1.6
2
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G = 2 .0V
0
20
40
60
80
01234
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
10V
7.0V
5.0V
4.5V
V G = 2 .0V
T A = 150
o C
2
4
6
8
02
46
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =16A
T A =25
o C
0.6
1.0
1.4
1.8
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =20 A
V G =10V
0
4
8
12
16
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
0.0
2.0
4.0
6.0
0
2040
6080
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =10V
V GS =4.5V
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