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參數資料
| 型號： | AP2612GY-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | AP2612GY-HF |
AP2612GY-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
Q
VG
4.5V
QGS
QGD
QG
Charge
0
200
400
600
800
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
The
rmal
Re
sponse
(
R
thja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃/W
t
T
0
2
4
6
8
0
4
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =5A
V DS =15V
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
0
10
20
30
01
23
45
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
T j = -40
o C
Operation in this area
limited by RDS(ON)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP2613GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2613GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Small Size & Lower Profile |
| AP2614GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Lower On-resistance |
| AP2615GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2622GY | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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