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參數資料
| 型號： | AP26G40GEO-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 V, N-CHANNEL IGBT |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 55K |
| 代理商： | AP26G40GEO-HF |
AP26G40GEO-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Saturation Voltage
Fig 4. Collector- Emitter Saturation Voltage
Characteristics
v.s. Junction Temperature
Fig 5. Collector Current v.s.
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
2
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
T C , Case Temperature (
o C)
V
CE(
sa
t)
,
S
atu
ration
V
o
ltage
(V
)
V GE =3.0V
I C =100A
I C =20A
I C =60A
0
20
40
60
80
100
120
024
68
V CE , Collector-Emitter Voltage (V)
I
C
,
C
o
ll
ect
o
rC
u
rr
e
nt
(A
)
T A = 150
o C
5.0V
4.0V
3.0V
V G = 2.5V
0
30
60
90
120
150
02
46
8
V CE , Collector-Emitter Voltage (V)
I
C
,
C
o
ll
ect
o
rC
u
rr
e
nt
(A
)
T A =25
o C
5.0V
4.0V
3.0V
V G =2.5V
0
2
4
6
8
10
01
23
45
6
V GE , Gate-Emitter Voltage(V)
V
CE
,
C
olle
c
tor-
E
mitte
rVoltage
(V
)
I C = 120A
T A =25
o C
0
40
80
120
160
01
23
45
6
V CE , Collector-Emitter Voltage (V)
I
C
,Co
lle
c
to
rCu
rre
n
t(
A
)
V GE = 3 .0V
T A =150
o C
I C =80A
0
2
4
6
8
10
01
23
45
6
V GE , Gate-Emitter Voltage(V)
V
CE
,
C
olle
c
tor-
E
mitte
rVoltage
(V
)
T A =150
o C
I C =80A
I C =40A
I C =60A
I C =40A
T A =25
o C
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