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參數資料
型號: AP4436GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 20 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數: 1/5頁
文件大小: 177K
代理商: AP4436GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low on-resistance
BVDSS
20V
▼ Capable of 2.5V gate drive
RDS(ON)
32mΩ
▼ Surface mount package
ID
6.4A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
1
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
2
Continuous Drain Current
3,V
GS @ 4.5V
5.1
Pulsed Drain Current
1
30
Gate-Source Voltage
±12
Continuous Drain Current
3,V
GS @ 4.5V
6.4
Parameter
Rating
Drain-Source Voltage
20
200805271
AP4436GM
RoHS-compliant Product
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
S
G
D
SO-8
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