
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 5 February 2006
AP503
DCS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
Product Features
1805 – 1880 MHz
32.2 dB Gain
+25 dBm CDMA2k 7fa Power
(-64 dBc ACPR)
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-compliant flange-mount pkg
Applications
Final stage amplifiers for Repeaters
Optimized for driver amplifier PA
mobile infrastructure
Product Description
The AP503 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 31.5 dB gain. The module has been
internally optimized for linearity to provide +25 dBm (-64
dBc ACPR) linear power for 7-carrier CDMA2000
applications.
The AP503 uses a high reliability InGaP/GaAs HBT
process technology and does not require any external
matching components. The module operates off of a +12V
supply and does not requiring any negative biasing voltages;
an internal active bias allows the amplifier to maintain high
linearity over temperature. It has the added feature of a
+5V power down control pin. While the module has been
tuned for optimal performance for Class AB applications,
the quiescent current can also be adjusted for Class B
applications through an external resistor. A low-cost metal
housing allows the device to have a low thermal resistance
and achieves over 100 years MTTF. All devices are 100%
RF and DC tested.
The AP503 is targeted for use as a driver or final stage
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device
an excellent candidate for next generation multi-carrier 3G
base stations using the DCS1800 frequency band.
Functional Diagram
Top View
Pin No.
Function
1
RF Output
2 / 4
Vcc
3 / 5
Vpd
6
RF Input
Case
Ground
Specifications (1)
25 C, Vcc=12V, Vpd=5V, Icq=835mA, R7=0, 50 unmatched fixture
Parameter
Units
Min
Typ
Max Test Conditions
Operational Bandwidth
MHz
1805 – 1880
Test Frequency
MHz
1845
Adjacent Channel Power Ratio
dBc
-63.8
-61
CDMA2000 7fa 25 dBm Total Power, 885 kHz offset
Power Gain
dB
29.5
32.2
34.5
Pout = +25 dBm
Input Return Loss
dB
11
Output Return Loss
dB
6
Output P1dB
dBm
+36
Output IP3
dBm
+50
Pout = +23 dBm/tone, Δf = 1 MHz
Operating Current (2)
mA
790
850
940
Pout = +25 dBm
Quiescent Current, Icq (2)
mA
780
835
920
Device Voltage, Vcc
V
+12
Device Voltage, Vpd
V
+5
Pull-down voltage: 0V = “OFF”, 5V=”ON”
Load Stability
VSWR
10:1
1. Test conditions unless otherwise noted: 25C.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
RF Input Power (continuous)
with output terminated in 50
+15 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AP503
DCS-band 4W HBT Amplifier Module
AP503-PCB
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=835mA)
1 2 3
4 5 6