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參數資料
型號: AP640R5-00
廠商: Alpha Industries, Inc.
英文描述: AB 3C 3#8 SKT RECP
中文描述: 24-40 GHz的砷化鎵單片單刀雙擲反光PIN開關
文件頁數: 1/2頁
文件大小: 66K
代理商: AP640R5-00
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 3/00A
1
24–40 GHz GaAs MMIC
SPDT Reflective PIN Switch
Features
I
Broad Bandwidth
I
Low Loss, < 1.1 dB (24–35 GHz)
I
High Isolation, > 30 dB
I
Excellent Return Loss, < -12 dB
I
Fast Switching Speed, < 2 ns
I
High Power Handling, 37 dBm Peak,
33 dBm CW
Description
Alpha’s single pole, double throw PIN diode switch is a
robust, high performance switch. It is ideal for low loss,
high isolation applications, particularly where broad
bandwidths and high power handling is required.The chip
uses Alpha’s proven PIN diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process.The GaAs MMIC employs
a shunt PIN diode in each arm and an on-chip bias
network.Chips are measured on a 100% basis at 24, 28,
31 and 35 GHz for insertion loss, isolation, input and
output return losses and also at DC for diode breakdown
voltage and turn on voltage.
Dimensions indicated in mm.
All pads are
0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter
Symbol
IL
Condition
Min.
Typ.
2
0.8
1.8
34
25
20
14
1
2
33
Max.
1.1
2.4
Unit
dB
dB
dB
dB
dB
dB
μ
A
ns
dBm
Insertion Loss
F = 24, 28, 31, 35 GHz
F = 38, 40 GHz
F = 24, 28, 31, 35, 38, 40 GHz
F = 24, 28, 31, 35, 38, 40 GHz
F = 24, 28, 31, 35 GHz
F = 38, 40 GHz
V = -50 V
Isolation
Input Return Loss
Output Return Loss (Insertion State)
ISO
RL
I
RL
O
30
15
13
12
10
Leakage Current
Switching Speed
1
Output Power at 1 dB Compression
1
I
DD
P
1 dB
F = 35 GHz
Electrical Specifications at 25°C
0
0.000
0.398
1.100
0.988
2
1
2
0
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature
-55
°
C to +125
°
C
Storage Temperature
-65
°
C to +150
°
C
DC Reverse Bias
-70 V (-10 mA)
DC Forward Bias
+1.3 V (50 mA)
P
IN
10 W
AP640R5-00
1. Not measured on a 100% basis.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
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