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參數(shù)資料
| 型號(hào)： | AP6679GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 216K |
| 代理商： | AP6679GJ-HF |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP6679GH/J-HF
100
1000
10000
1
5
9
1317
2125
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
1
2
3
4
5
6
7
0
102030405060
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -16A
V DS = -24V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T C =25
o C
Single Pulse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP6679GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP6679GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GP-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP6679GR | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP6679GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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