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參數(shù)資料
| 型號(hào)： | AP6680GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 11.5 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 81K |
| 代理商： | AP6680GM |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-Resistance
BVDSS
30V
▼ High Vgs Max Rating Voltage
RDS(ON)
11mΩ
▼ Surface Mount Package
ID
11.5A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
50
℃/W
Data and specifications subject to change without notice
200902302
AP6680GM
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
± 25
Continuous Drain Current
3
11.5
Continuous Drain Current
3
9.5
Pulsed Drain Current
1
50
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
G
D
SO-8
G
D
S
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