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參數資料
型號: AP6680GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 11.5 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, SOP-8
文件頁數: 4/6頁
文件大?。?/td> 81K
代理商: AP6680GM
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP6680GM
0.01
0.1
1
10
100
0.1
1
10
100
V DS (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rma
li
zed
Therma
lR
esp
o
n
se
(R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
5
10
15
25
50
75
100
125
150
T c , Case Temperature (
o C)
I
D
,
Dra
in
C
u
rre
nt
(A
)
0
0.5
1
1.5
2
2.5
3
0
50
100
150
T c , Case Temperature (
o C)
P
D
(W
)
相關PDF資料
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AP90T03P 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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