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參數(shù)資料
| 型號： | AP92T03GI-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 93K |
| 代理商： | AP92T03GI-HF |
AP92T03GI-HF
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
0
20
40
60
80
100
120
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
S
o
u
rce
V
o
lta
g
e(V
)
V DS =12 V
V DS =16 V
V DS =20 V
I D =40 A
0
1000
2000
3000
4000
5000
1
5
9
13
1721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms.
10ms
100ms
DC
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
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