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參數資料
型號: AP9412AGM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數: 3/4頁
文件大小: 93K
代理商: AP9412AGM
AP9412AGM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
001
122
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
V G = 4.0 V
10V
7.0 V
6.0 V
5.0 V
T A =25
o C
0
10
20
30
40
50
001122
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
10V
7.0 V
6.0 V
5.0 V
V G = 4 .0 V
4
5
6
7
8
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =12 A
T A =25
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =16 A
V G =10V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
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