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參數資料
| 型號： | AP94T07GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | AP94T07GJ-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
75V
▼ Lower On-resistance
RDS(ON)
8mΩ
▼ Fast Switching Characteristic
ID
75A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@Tc=25℃
A
ID@Tc=100℃
A
IDM
A
PD@Tc=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
Total Power Dissipation
1.36
AP94T07GJ-HF
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
75
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
75
Operating Junction Temperature Range
-55 to 175
Continuous Drain Current, VGS @ 10V
58
Pulsed Drain Current
1
300
Storage Temperature Range
Total Power Dissipation
125
-55 to 175
201012021
Thermal Data
Parameter
1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-251 package is widely preferred for all commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-251(J)
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相關代理商/技術參數 |
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|---|---|
| AP94T07GMT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP94T07GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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