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參數資料
| 型號： | AP9930AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.035 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 120K |
| 代理商： | AP9930AGM |
Advanced Power
2N AND 2P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
N-CH BVDSS
30V
▼ Full Bridge Application on
RDS(ON)
35mΩ
LCD Monitor Inverter
ID
5.2A
▼ RoHS Compliant
P-CH BVDSS
-30V
RDS(ON)
72mΩ
Description
ID
-3.5A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
-3.5
A
ID@TA=70℃
Continuous Drain Current
3
-2.8
A
IDM
Pulsed Drain Current
1
-20
A
PD@TA=25℃
Total Power Dissipation
1.38
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
90
℃
/W
Data and specifications subject to change without notice
Parameter
1
201004261
AP9930AGM
Thermal Data
RoHS-compliant Product
30
+20
5.2
4.1
20
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
N1G
N1D/P1D
N1S/N2S
N2G
P1G
P1S/P2S
N2D/P2D
P2G
SO-8
N1G
N1S
P1G
P1S
P1N1D
N2G
N2S
P2G
P2S
P2N2D
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